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Preliminary Technical Information
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching
IXGH36N60B3C1
VCES IC110 VCE(sat) tfi(typ)
TO-247
= = =
600V 36A 1.8V 100ns
Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C (Limited by Leads) TC = 110C TC = 110C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 5 Clamped Inductive Load TC = 25C
Maximum Ratings 600 600 20 30 75 36 20 200 ICM = 80 @ VCES 250 -55 ... +150 150 -55 ... +150 V V V V A A A A A W C C C C C Nm/lb.in. g Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Advantages High Power Density Low Gate Drive Requirement Features Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Package
G = Gate E = Emitter C = Collector TAB = Collector G C (TAB)
E
1.6mm (0.062 in.) from Case for 10 seconds Plastic Body for 10 seconds Mounting Torque
300 260 1.13/10 6
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250A, VCE = VGE VCE = VCES, VGE = 0V TJ =125C VCE = 0V, VGE = 20V IC = 30A, VGE = 15V, Note 1
Characteristic Values Min. Typ. Max. 3.0 5.0 35 1.25 100 1.5 1.8 V A mA nA V
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS100141A(06/09)
IXGH36N60B3C1
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS 0.21 Inductive load, TJ = 125C IC = 30A, VGE = 15V VCE = 400V, RG = 5 Note 2 Inductive load, TJ = 25C IC = 30A, VGE = 15V VCE = 400V, RG = 5 Note 2 IC = 30A, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 30A, VCE = 10V, Note 1 Characteristic Values Min. Typ. Max. 28 42 2430 390 28 80 12 36 20 26 0.39 125 100 0.80 20 27 0.43 180 170 1.50 200 160 1.50 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.50 C/W C/W
Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
P
TO-247 Outline
Reverse Diode (SiC) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) VF RthJC IF = 20A, VGE = 0V, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 1.65 1.80 2.10 V V
0.90 C/W
Notes
1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGH36N60B3C1
Fig. 1. Output Characteristics @ 25C
60 VGE = 15V 13V 11V 9V 300 VGE = 15V 13V 11V 9V
Fig. 2. Extended Output Characteristics @ 25C
50
250
7V 30
IC - Amperes
IC - Amperes
40
200
150 7V 100
20
10
5V
50 5V
0 0.0 0.4 0.8 1.2 1.6 2.0 2.4
0 0 2 4 6 8 10 12 14
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
60 VGE = 15V 13V 11V 9V 1.40 VGE = 15V 1.30
Fig. 4. Dependence of VCE(sat) on Junction Temperature
50
I
C
= 60A
IC - Amperes
40 7V 30
VCE(sat) - Normalized
1.20
1.10 I 1.00
C
= 30A
20 5V
10
0.90 I
C
= 15A 100 125 150
0 0.0 0.4 0.8 1.2 1.6 2.0 2.4
0.80 -50 -25 0 25 50 75
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
3.8 3.4 3.0 2.6 2.2 1.8 1.4 1.0 4 5 6 7 8 9 10 11 12 13 14 15 40 I
C
Fig. 6. Input Admittance
240 TJ = - 40C 25C 125C
TJ = 25C
200
= 60A 30A 15A
IC - Amperes
160
VCE - Volts
120
80
0 3 4 5 6 7 8 9 10
VGE - Volts
VGE - Volts
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXGH36N60B3C1
Fig. 7. Transconductance
90 TJ = - 40C 80 70 14 12 25C 125C 16 VCE = 300V I C = 30A I G = 10mA
Fig. 8. Gate Charge
g f s - Siemens
60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 180
VGE - Volts
220 240
10 8 6 4 2 0
200
0
10
20
30
40
50
60
70
80
90
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
10,000 90 80
Fig. 10. Reverse-Bias Safe Operating Area
Capacitance - PicoFarads
70 Cies
IC - Amperes
1,000
60 50 40 30 20 TJ = 125C RG = 5 dV / dt < 10V / ns
Coes 100
f = 1 MHz
10 0 5 10 15 20 25
Cres 30 35 40
10 0 100
150
200
250
300
350
400
450
500
550
600
650
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z(th)JC - C / W
0.10
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS REF: G_36N60B3C1(55)6-05-09
IXGH36N60B3C1
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
7 6 5 Eoff VCE = 400V I
C
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
2.8 4.8 Eoff 4.0 VCE = 400V Eon 1.8
Eon -
---
TJ = 125C , VGE = 15V = 60A
2.4 2.0
---1.5
RG = 5 , VGE = 15V
Eoff - MilliJoules
4 3 I C = 30A 2 1 0 0 10 20 30 40 50 60 70 80 90 I C = 15A 100 110
1.6 1.2 0.8 0.4 0.0 120
Eoff - MilliJoules
3.2
1.2
E on - MilliJoules
E on - MilliJoules
2.4
TJ = 125C, 25C
0.9
1.6
0.6
0.8
0.3
0.0 15 20 25 30 35 40 45 50 55 60
0.0
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
4.0 3.6 3.2 2.8 Eoff VCE = 400V Eon 2.0 320 300 280
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
1100 1.8 1.6
----
RG = 5 , VGE = 15V
tf i
VCE = 400V
td(off) - - - -
1000 900
TJ = 125C, VGE = 15V
t d(off) - Nanoseconds
2.4 I 2.0 1.6 1.2 0.8 0.4 0.0 25 35 45 55 65 75 85 95 105 115 I C = 15A I C = 30A
C
1.2 = 60A 1.0 0.8 0.6 0.4 0.2 0.0 125
t f i - Nanoseconds
1.4
260 240 220 200 180 160 140 120 0
800 700 I
C
E on - MilliJoules
E off - MilliJoules
= 15A, 30A, 60A
600 500 400 300 200 100 120
10
20
30
40
50
60
70
80
90
100
110
TJ - Degrees Centigrade
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
350 300 250 200 150 100 50 0 15 20 25 30 35 40 45 50 55 60 TJ = 125C 220 240 220 200
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
230
tfi
VCE = 400V
td(off) - - - -
RG = 5 , VGE = 15V
200 180 160 140 120 100 80
tfi
VCE = 400V
td(off) - - - -
210 190 170
RG = 5 , VGE = 15V
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f i - Nanoseconds
t f i - Nanoseconds
180 I I
C C
= 30A 150 130 I C = 15A 110 90 70 125
160 140 120 100 80 25 35
= 60A
TJ = 25C
45
55
65
75
85
95
105
115
IC - Amperes
TJ - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXGH36N60B3C1
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
150 135 120 110 70 60
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
24 100 90
tr i
VCE = 400V
td(on) - - - -
tr i
VCE = 400V
td(on) - - - -
TJ = 125C, VGE = 15V
RG = 5 , VGE = 15V
23
t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r i - Nanoseconds
I
C
= 60A
t r i - Nanoseconds
105 90 75 60 45 30 15 0 0 10 20 30 40 50 60 I C = 30A
80 70 60 50
50 40 30 20 10 0 15
22 21 20 19 18 17
TJ = 125C, 25C
I
C
= 15A
40 30 20 10 120
70
80
90
100
110
20
25
30
35
40
45
50
55
60
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
80 70 60 I C = 60A 24 23 22 21 20 I C = 30A 19 18 17 16 125 40 35 30
Fig. 21. Forward Current vs. Forward Voltage
t r i - Nanoseconds
tr i
VCE = 400V
td(on) - - - -
TJ = 25C TJ = 125C
t d(on) - Nanoseconds
40 30 20 10 0 25 35 45 55 65 75 85 95 105 115
IF - Amperes
50
RG = 5 , VGE = 15V
25 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
I
C
= 15A
TJ - Degrees Centigrade
VF - Volts
Fig. 22. Maximum Transient Thermal Impedance for Diode
1.00
0.10
Z(th)JC - C / W
0.01
0.00 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS REF: G_36N60B3C1(55)6-05-09

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